Modeling and Characterization of RF and Microwave Power FETs 1st Edition – PDF/EPUB Version Downloadable

$49.99

Author(s): Peter Aaen; Jaime A. Plá; John Wood
Publisher: Cambridge University Press
ISBN: 9780521870665
Edition: 1st Edition

Important: No Access Code

Delivery: This can be downloaded Immediately after purchasing.

Version: Only PDF Version.

Compatible Devices: Can be read on any device (Kindle, NOOK, Android/IOS devices, Windows, MAC)

Quality: High Quality. No missing contents. Printable

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Description

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years’ device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.